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Datasheet P50N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P50N06    STP50N06

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DA
 STMicroelectronics
STMicroelectronics		 datasheet P50N06 pdf

P50 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P50N06

STP50N06

STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.028 Ω < 0.028 Ω ID 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REP
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
P50AN4

LCD_Module

 P50AN4 Version : 1 TECHNICAL SPECIFICATION Customer’s Confirmation Date By m o .c Date : Dec. 16, U 1999 4 t e e This technical specification is subject to change without notice. h Please return 1 copy with your signature on this page for approval. S a at .D w w w 3,LI
 PRIME_VIEW
PRIME_VIEW		 datasheet pdf - PRIME_VIEW
P50N03LDG

N-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 27 RDS(ON) 12m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
Niko-Sem
Niko-Sem		 datasheet pdf - Niko-Sem


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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