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Datasheet P50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 39 | P5002CDG | N-Channel Enhancement Mode MOSFET P5002CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 10V
ID 20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±16
Continuous Drain Current Pulsed Drain Curren |
 UNIKC |
 |
| 38 | P5002CMG | N-Channel Enhancement Mode MOSFET P5002CMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 50mΩ @VGS = 4.5V
ID 4A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS 20 VGS ±8
Continuous Drain |
UNIKC |
|
| 37 | P5003QVG | N&P-Channel Enhancement Mode MOSFET P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 V |
UNIKC |
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| 36 | P5003QVT | N&P-Channel Enhancement Mode MOSFET P5003QVT
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS =10V
-30V
45mΩ @VGS = -10V
ID Channel 10A N -7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VD |
UNIKC |
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