Datasheet P4506BV Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P4506BV	N-Channel Enhancement Mode MOSFET P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed D	UNIKC

P450 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P4506BD	N-Channel Field Effect Transistor NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P4506BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 45mΩ ID 22A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Dra	NIKO-SEM
P4506BD	N-Channel Enhancement Mode MOSFET P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS	UNIKC
P4506BV	N-Channel Enhancement Mode MOSFET P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 45mΩ @VGS = 10V ID 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Dr	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
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