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Datasheet P400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P400 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical desi |  International Rectifier | data |
| 2 | P4004ED | P-Channel Enhancement Mode MOSFET P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20 |  UNIKC | mosfet |
| 3 | P4004ED | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect Transistor
D
P4004ED
TO-252(DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 40mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS D |  NIKO-SEM | transistor |
| 4 | P4006BV | N-Channel Enhancement Mode MOSFET P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drai | UNIKC | mosfet |
| 5 | P4006DV | P-Channel Enhancement Mode MOSFET P4006DV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuo | UNIKC | mosfet |
P40 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P40 | Definite Purpose Magnetic Contactor www.DataSheet.co.kr
Catalog 1308242 Issued 3-03 (PDF Rev. 5-05)
P&B
P30/P40 series
Definite Purpose Magnetic Contactor 30/40 Ampere Full Load 40/50 Ampere Resistive AC & DC Coils
File E22575 File LR15734
DC Coil AC Coil
Users should thoroughly review the technical data before selecting a product  Tyco data | | |
| 2 | P400 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical desi International Rectifier data | | |
| 3 | P4004ED | P-Channel Enhancement Mode MOSFET P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20 UNIKC mosfet | | |
| 4 | P4004ED | P-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM
P-Channel Logic Level Enhancement Mode Field Effect Transistor
D
P4004ED
TO-252(DPAK) Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 40mΩ ID -21A
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS D NIKO-SEM transistor | | |
| 5 | P4006BV | N-Channel Enhancement Mode MOSFET P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drai UNIKC mosfet | | |
| 6 | P4006DV | P-Channel Enhancement Mode MOSFET P4006DV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
40mΩ @VGS = -10V
ID -5.9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuo UNIKC mosfet | | |
| 7 | P401 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I2776 rev. E 04/99
P400 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical desi International Rectifier data | |
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