No | Part number | Description ( Function ) | Manufacturers | |
1 | P30N60T | IGP30N60T TrenchStop Series IGP30N60T IGW30N60T Low Loss IGBT in Trench and Fieldstop technology • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribut |
Infineon Technologies |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to P30N60T |
Part No | Description ( Function) | Manufacturers | |
FMP30N60S1 | N-Channel enhancement mode power MOSFET FMP30N60S1 Super J-MOS series http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET N-Channel enhancement mode power MOSFET 2.7 ±0.1 6.4 ±0.2 15 ± 0.2 Features Low on-state resistance Low switching loss easy to use (more controllabe switching dV/dt by Rg) O |
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IGP30N60H3 | IGBT IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGP30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGP30N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: TRENCH |
Infineon |
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IGP30N60T | IGBT TrenchStop® Series IGP30N60T IGW30N60T Low Loss IGBT in TrenchStop® and Fieldstop technology • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Frequency Converters - Uninterruptible P |
Infineon |
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IXFP30N60X | Power MOSFET ( Transistor ) X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFA30N60X IXFP30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight |
IXYS |
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IXGP30N60B2 | HiPerFAST IGBT Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGP 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Ts |
IXYS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |