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Datasheet P2N80 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P2N80    FQP2N80

FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been espe
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet P2N80 pdf

P2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P2003EVG

P-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor D P2003EVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PAR
 Niko
Niko		 datasheet pdf - Niko
P2NC60FP

STP2NC60FP

N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
P20NM60FP

STP20NM60FP

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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