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Datasheet P281 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | P281 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
 Polyfet RF Devices |
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| 6 | P2811A | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i |
 ON Semiconductor |
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| 5 | P2811B | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i |
ON Semiconductor |
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| 4 | P2812A | Low Power EMI Reduction IC P2811A/B and P2812A/B and P2814A/B
Low Power EMI Reduction IC
Features • FCC approved method of EMI attenuation • Provides up to 15dB EMI reduction • Generates a 1x, 2x and 4x low EMI spread spectrum clock of the input frequency o 1x: P2811A/B o 2x: P2812A/B o 4x: P2814A/B • Optimized for i |
ON Semiconductor |
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