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P2804HVG PDF Datasheet

The P2804HVG is Dual N-channel Enhancement Mode MOSFET, Dual N-channel Enhancement Mode Field. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
2 P2804HVG
Dual N-Channel Enhancement Mode MOSFET

P2804HVG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 28mΩ @VGS = 10V ID 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 7 6 40 Pow

UNIKC
UNIKC
pdf
1 P2804HVG
Dual N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor P2804HVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 40 RDS(ON) 28m ID 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Stora

NIKO-SEM
NIKO-SEM
pdf

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