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Datasheet P201B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 P201B   CdS photoconductive cell

VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral
Hamamatsu Corporation
Hamamatsu Corporation
datasheet P201B pdf

P2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
P2003EVG

P-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor D P2003EVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 20m ID -9A G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PAR
Niko
Niko
datasheet pdf - Niko
P2NC60FP

STP2NC60FP

N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2NC60 STP2NC60FP s s s s s STP2NC60 STP2NC60FP VDSS 600 V 600 V RDS(on) <8Ω <8Ω ID 1.9 A 1.9 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
ST Microelectronics
ST Microelectronics
datasheet pdf - ST Microelectronics
P20NM60FP

STP20NM60FP

STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 s s s s Figure 1: Package RDS(on) < 0.29 Ω < 0.29 Ω < 0.29
ST Microelectronics
ST Microelectronics
datasheet pdf - ST Microelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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