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Datasheet P1820 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | P1820 | (P1818 - P1822) Low Power Mobile VGA EMI Reduction IC
Production March 2003
®
P1818/19/20/21/22
Low Power Mobile VGA EMI Reduction IC
Features
• • • • FCC approved method of EMI attenuation Provides up to 15 dB EMI reduction Generates a low EMI spread spectrum clock and a non-spread reference clock of the input frequen |
 Alliance Semiconductor |
 |
| 6 | P1820AD | N-Channel Enhancement Mode MOSFET P1820AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ @VGS = 10V
ID 18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±30
Continuous |
 UNIKC |
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| 5 | P1820AD | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P1820AD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ
ID 18A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Sourc |
 NIKO-SEM |
|
| 4 | P1820BD | N-Channel Enhancement Mode MOSFET P1820BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
160mΩ @VGS = 10V
ID 18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±30
Continuous |
UNIKC |
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| Número de pieza | Descripción | Fabricantes | |
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