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Datasheet P123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | P123 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly |
 Polyfet RF Devices |
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| 1 | P123 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de |
 International Rectifier |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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