Datasheet P106AAT Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	P106AAT	N-Channel Enhancement Mode MOSFET P106AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 65V 10mΩ @VGS = 10V ID 74A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 65 Gate-Source Voltage VGS ±20 Continuous Drai	UNIKC

P106 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
P1060ATF	N-Channel Enhancement Mode MOSFET P1060ATF(S) N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω @VGS = 10V ID 10A 100% UIS tested TO-220F(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600	UNIKC
P1060ETF	N-Channel Field Effect Transistor NIKO-SEM N-ChFainenldelEEffnehcatnTcreamnseinsttoMrodeHaPPlo11g00e66n00-FEErTTeFFe:S&T:OTLOe-2a-22d02-FF0rFeSe PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.75Ω ID 10A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Dr	NIKO-SEM
P1065AT	N-Channel Enhancement Mode MOSFET P1065AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 0.75Ω @VGS = 10V ID 10A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage V	UNIKC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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