No | Part number | Description ( Function ) | Manufacturers | |
1 | P1004HV | N-Channel Enhancement Mode MOSFET P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 13mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±24 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Aval |
UNIKC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to P1004HV |
Part No | Description ( Function) | Manufacturers | |
AP1004CMX-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP1004CMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Ultra-low Forward Diode Low Profile (< 0.7mm ) D BV DSS R DS(ON) G S 25V 1.8mΩ 32A ID Description The AP1004CMX-3 uses the latest APEC |
Advanced Power Electronics |
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BXMP1004 | RF Amplifier RF AMPLIFIER MODEL BXMP1004 Features ! High Power Output: Greater Than 2 Watts ! Internal Regulator: Accepts +17 Volts to +24 Volts ! High Gain: 31 dB Typical Medium Power Amplifier Available As: BXMP1004, Connectorized Housing Typical Intermodulation Perfor |
Spectrum Microwave |
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CP1004 | SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A/ HEAT-SINK MTG 10A) CP1000 THRU CP1008 SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEATURES l Surge overload rating—200 Amperes peak l Low forward voltage drop and reverse leakage l l l Small size, simple installation Plastic package has Underwrit |
Pan Jit International Inc. |
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CP1004 | SINGLE-PHASE SILICON BRIDGE CP1000 THRU CP1008 SINGLE-PHASE SILICON BRIDGE VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 10A FEATURES l l l l l Surge overload rating—200 Amperes peak Low forward voltage drop and reverse leakage Small size, simple installation Plastic package has Underwrit |
TRSYS |
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FYP1004DN | SCHOTTKY BARRIER RECTIFIER FYP1004DN FYP1004DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIE |
Fairchild Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |