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P1003EVG PDF Datasheet

The P1003EVG is P-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 P1003EVG
P-Channel Enhancement Mode MOSFET

P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1 SYMBOL VDS VGS LIMITS -30

UNIKC
UNIKC
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Recommended search results related to P1003EVG

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AP1003BMP-3   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP1003BMP-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 4.5mΩ 18.4A ID Description The AP1003BMP-3 uses the latest A

Advanced Power Electronics
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AP1003BST   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP1003BST Preliminary Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4.7mΩ 17.3A Description The AP1003BST used the latest APEC Power MOSFET silic

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AP1003BST-3   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP1003BST-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 4.5mΩ 17.3A ID Description The AP1003BST-3 uses the latest A

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RF AMPLIFIER MODEL BXMP1003 ! Ultra High IP2: +93 dBm Typical ! High 3rd Order Intercept: +49 dBm Typical ! High Power 1 dB Comp.: +32 dBm Typical Specifications CHARACTERISTIC Frequency (MHz) Gain (dB) Gain Flatness (dB) Power @ 1 dB Comp. (dBm) IP2 (dBm) IP3 (dBm) Reverse Isola

Spectrum Microwave
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GP1003   Glass Passivated Rectifiers

GP1001 - GP1007 Taiwan Semiconductor CREAT BY ART 10A, 50V - 1000V Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96

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