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P0910ATF PDF Datasheet

The P0910ATF is N-channel Enhancement Mode MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 P0910ATF
N-Channel Enhancement Mode MOSFET

P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 54 38 150 Avalanche Current IAS 109

UNIKC
UNIKC
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Recommended search results related to P0910ATF

Part No Description ( Function) Manufacturers PDF
P0910A   N-Channel Enhancement Mode MOSFET

P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Curre

UNIKC
UNIKC
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P0910ATG   N-Channel Enhancement Mode MOSFET

P0910ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Curr

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5091002P01   5091002P01

Vdd 4,25 9,10,20,21,24 X1 23 1 5091002P01 FCR4.0MC5 RESET 19 X2 22 3 V1H/V1L CL1 CL2 V2H/V2L 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation

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BSC0910NDI   Dual N-Channel OptiMOS MOSFET

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.5V rated) VDS RDS(on),max • 100% avalanche tested ID • Qualified according to JEDEC1) for target application

Infineon
Infineon
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[1]    

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