No | Part number | Description ( Function ) | Manufacturers | |
1 | P0320AL | N-Channel Enhancement Mode MOSFET P0320AL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 1.1Ω @VGS = 10V ID 1A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1 0.8 4 Avalanche Current IAS 2 Avalan |
UNIKC |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
DXTP03200BP5 | 200V PNP HIGH VOLTAGE TRANSISTOR ADVANCE INFORMATION Features • 43% smaller than SOT223; 60% smaller than TO252 • Maximum height just 1.1mm • Rated up to 3.2W • VCEO = -200V • IC = -2A; ICM = -5A • Low Saturation voltage • Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) • “Green” De |
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ZXTP03200BG | 200V PNP Low Vce transistor ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on |
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ZXTP03200BGTA | 200V PNP Low Vce transistor ZXTP03200BG 200V PNP Low VCE(sat) transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on |
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ZXTP03200BZ | 200V PNP LOW Vce TRANSISTOR Features • BVCEO > -200V • BVECO > -2V • Continuous current IC(cont) = 2A • VCE(sat < -160mV @ -1A • RCE(sat)=130mΩ • PD = 2.4W • 2 Amps continuous current • Up to 5 Amps peak current • Very low saturation voltage • Enhanced switching performance Application |
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ZXTP03200BZTA | 200V PNP LOW Vce TRANSISTOR Features • BVCEO > -200V • BVECO > -2V • Continuous current IC(cont) = 2A • VCE(sat < -160mV @ -1A • RCE(sat)=130mΩ • PD = 2.4W • 2 Amps continuous current • Up to 5 Amps peak current • Very low saturation voltage • Enhanced switching performance Application |
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