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Datasheet NVMS5P02R2G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NVMS5P02R2G | Power MOSFET, Transistor NTMS5P02, NVMS5P02
Power MOSFET -5.4 Amps, -20 Volts
P−Channel Enhancement−Mode Single SOIC−8 Package
Features
• High Density Power MOSFET with Ultra Low RDS(on)
Providing Higher Efficiency
• Miniature SOIC−8 Surface Mount Package − Saves Board Space • Diode Exhibits High Speed with | ON Semiconductor | mosfet |
NVM Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NVM3060 | 4096-Bit EEPROM NVM 3060 4096-Bit EEPROM
Edition Feb. 14, 1990 6251-309-2/E
ITT Semiconductors
NVM 3060
Contents Page 3 4 4 4 4 5 5 5 5 7 8 8 8 8 8 9 9 9 9 10 Section 1. 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.5.1. 2.5.2. 2.5.3. 3. 3.1. 3.2. 3.3. 3.4. 4. 4.1. 4.2. 4.3. 5. Title Introduction Specifications Outline Dimensio ETC data | | |
2 | NVMD4N03 | Power MOSFET, Transistor NTMD4N03, NVMD4N03 Power MOSFET
Features
4 A, 30 V, N−Channel SO−8 Dual
• Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 W, VGS = 10 V (Typ) − RDS(on) = 0.065 W, VGS = 4 ON Semiconductor mosfet | | |
3 | NVMD6N03R2 | Power MOSFET, Transistor NTMD6N03R2, NVMD6N03R2 Power MOSFET
30 V, 6 A, Dual N-Channel SOIC-8
Features http://onsemi.com
VDSS 30 V RDS(ON) Typ 24 mΩ @ VGS = 10 V ID Max 6.0 A
Designed for use in low voltage, high speed switching applications Ultra Low On--Resistance Provides
Higher Efficiency and Extends Battery L ON Semiconductor mosfet | | |
4 | NVMD6N04 | Power MOSFET, Transistor NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS ON Semiconductor mosfet | | |
5 | NVMD6N04R2G | Power MOSFET, Transistor NTMD6N04, NVMD6N04
Power MOSFET
40 V, 5.8 A, Dual N−Channel SOIC−8
Features
• Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 W, VGS = 10 V (Typ) − RDS(on) = 0.034 W, VGS ON Semiconductor mosfet | | |
6 | NVMD6P02 | Power MOSFET, Transistor NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
• Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature Dual SOIC−8 Surface Mount Package • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified ON Semiconductor mosfet | | |
7 | NVMFD5483NL | Power MOSFET, Transistor NVMFD5483NL
Power MOSFET
60 V, 36 mW, 24 A, Dual N−Channel
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • 175°C Operating Temperature • NVMFD5483NLWF − Wettable Flank Option for Enhance ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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