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Datasheet NVJD4401N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NVJD4401NSmall Signal MOSFET

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devi
ON Semiconductor
ON Semiconductor
mosfet


NVJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NVJD4401NSmall Signal MOSFET

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N−Channel, SC−88 ESD Protection Features • Small Footprint (2 x 2 mm) • Low Gate Charge N−Channel Device • ESD Protected Gate • Same Package as SC−70 (6 Leads) • AEC−Q101 Qualified and PPAP Capable − NVJD4401N • These Devi
ON Semiconductor
ON Semiconductor
mosfet
2NVJD5121NPower MOSFET, Transistor

NVJD5121N Power MOSFET 60 V, 300 mA, Dual N−Channel with ESD Protection, SC−88 Features • Low RDS(on) • Low Gate Threshold • Low Input Capacitance • ESD Protected Gate • NVJD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101
ON Semiconductor
ON Semiconductor
mosfet
3NVJS4151PTrench Power MOSFET

NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 • Gate Diodes for ESD Protection • AEC−Q101
ON Semiconductor
ON Semiconductor
mosfet
4NVJS4405NSmall Signal MOSFET

NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88 Features • Advance Planar Technology for Fast Switching, Low RDS(on) • Higher Efficiency Extending Battery Life • AEC−Q101 Qualified and PPAP Capable − NVJS4405N • These Devices are Pb−Free and are RoH
ON Semiconductor
ON Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

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