No | Part number | Description ( Function ) | Manufacturers | |
1 | NTR5198NL | Power MOSFET ( Transistor ) NTR5198NL Power MOSFET 60 V, 155 mW, Single N−Channel Logic Level, SOT−23 Features • Small Footprint Industry Standard Surface Mount SOT−23 Package • Low RDS(on) for Low Conduction Losses and Improved Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value U |
ON Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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2N5198 | Monolithic N-Channel JFET Dual Siliconix 2N5196/5197/5198/5199 Monolithic NĆChannel JFET Duals Product Summary Part Number 2N5196 2N5197 2N5198 2N5199 VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) -0.7 to -4 -50 1 -0.7 to -4 -50 1 -0.7 to -4 -50 1 -0.7 to -4 -50 1 IG Max (pA) -15 -15 -15 -15 j |
TEMIC |
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2N5198 | N-Channel Dual Silicon Junction Field-Effect Transistor 8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain S |
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2SC5198 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) 2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifier’s output stage |
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