No | Part number | Description ( Function ) | Manufacturers | |
1 | NTGD3133P | Power MOSFET ( Transistor ) NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS −20 V RDS(on) MAX 145 m |
ON Semiconductor |
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Part No | Description ( Function) | Manufacturers | |
2N3133 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 |
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2SC3133 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
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2SC3133 | NPN SILICON RF POWER TRANSISTOR 2SC3133 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC 6.0 A 25 V 60 V 20 W @ TC = 25 °C -65 °C to +150 |
ASI |
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2SK3133 | Silicon N Channel MOS FET High Speed Power Switching 2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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