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Datasheet NTGD1100L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NTGD1100LPower MOSFET, Transistor

NTGD1100L 8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are neede
ON Semiconductor
ON Semiconductor		mosfet


NTG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NTGHigh Accuracy NTC Thermistors

MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NTG Series • • • Features DO-35 glass package High stability Wide range of operating temperature from -50℃ up to 25
MCC
MCC		thermistor
2NTG222-3950High Accuracy NTC Thermistors

MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NTG222-3950 Features • • • DO-35 glass package High stability Wide range of operating temperature from -50℃ up to 25
MCC
MCC		thermistor
3NTGD1100LPower MOSFET, Transistor

NTGD1100L 8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are neede
ON Semiconductor
ON Semiconductor		mosfet
4NTGD3133PPower MOSFET, Transistor

NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • • • • • Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility
ON Semiconductor
ON Semiconductor		mosfet
5NTGD3147FPower MOSFET and Schottky Diode

NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device h
ON Semiconductor
ON Semiconductor		mosfet
6NTGD3148NPower MOSFET, Transistor

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device Applications http://onsemi.c
ON Semiconductor
ON Semiconductor		mosfet
7NTGD3149CPower MOSFET, Transistor

NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Resp
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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