No | Part number | Description ( Function ) | Manufacturers | |
2 | NTE66 | MOSFET N-Ch / Enhancement Mode High Speed Switch NTE66 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Sa |
NTE Electronics |
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1 | NTE6664 | Integrated Circuit 64K-Bit Dynamic RAM NTE6664 Integrated Circuit 64K–Bit Dynamic RAM Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this 5V only dynamic RAM combines high performance with low cost and improved reliability. By multiplying row– and column� |
NTE Electronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |