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Datasheet NTE65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NTE65 | Silicon NPN Transistor High Voltage / Low Noise for CATV / MATV NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV
Description: The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal amplifier and also used in applications requiring fast switching times. Features: D High Current–Gain Bandwidt |
 NTE Electronics |
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| 3 | NTE6507 | Integrated Circuit NMOS / 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC NTE6507 Integrated Circuit NMOS, 8 Bit Microprocessor (MPU) w/On–Chip Clock OSC
Description: The NTE6507 integrated circuit is an 8 bit microprocessor in a 28–Lead DIP type package which provides a selection of addressable memory range, interrupt input options, and on–chip clock oscillators an |
NTE Electronics |
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| 2 | NTE6508 | Integrated Circuit CMOS / 1K Static RAM (SRAM) NTE6508 Integrated Circuit CMOS, 1K Static RAM (SRAM)
Description: The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16–Lead DIP type package fabricated using self–aligned silicon gate technology. Synchronous circuit design techniques are employed to acheive high performance and low power ope |
NTE Electronics |
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| 1 | NTE65101 | Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM) NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory (SRAM)
Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data in |
NTE Electronics |
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