No | Part number | Description ( Function ) | Manufacturers | |
1 | NTE5867 | (NTE5850 - NTE5869) Silicon Power Rectifier Diode NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Ran |
NTE Electronics |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2N5867 | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 2N5867 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.19 |
Seme LAB |
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2N5867 | (2N5867 / 2N5868) Silicon PNP Power Transistor SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter |
SavantIC |
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AN5867K | RGB Interface IC w w w a .D S ta e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
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MGFC38V5867 | 5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET June/2004
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MGFC39V5867 | 8W INTERNALLY MATCHED GaAs FET
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Part Number | Function | Manufacturers | |
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Vishay |
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