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Datasheet NTE332 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | NTE332 | Silicon Complementary Transistors NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maxi |
 NTE |
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| 4 | NTE3320 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitt |
NTE |
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| 3 | NTE3321 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitt |
NTE |
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| 2 | NTE3322 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitt |
NTE |
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