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Datasheet NTE331 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NTE331 | Silicon Complementary Transistors Audio Power Amp / Switch NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch
Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications. Absolute Maximu |
 NTE |
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| 3 | NTE3310 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3310 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) C |
NTE |
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| 2 | NTE3311 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) C |
NTE |
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| 1 | NTE3312 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) C |
NTE |
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