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Datasheet NTE322 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NTE322 | Silicon NPN Transistor RF Power Output NTE322 Silicon NPN Transistor RF Power Output
Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–mod |
 NTE |
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| 3 | NTE3220 | Optoisolator NPN Transistor Output NTE3220 & NTE3221
Optoisolator NPN Transistor Output
Features: D Current Transfer Ratio: CTR: 50% Min @ IF = 5mA, VCE = 5V D High Input–Output Isolation Voltage: VISO = 5000Vrms D Compact DIP Package: NTE3220: 2–Channel Type (8–Lead DIP) NTE3221: 4–Channel Type (16–Lead DIP) Applications: |
NTE |
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| 2 | NTE3221 | Optoisolator NPN Transistor Output NTE3220 & NTE3221
Optoisolator NPN Transistor Output
Features: D Current Transfer Ratio: CTR: 50% Min @ IF = 5mA, VCE = 5V D High Input–Output Isolation Voltage: VISO = 5000Vrms D Compact DIP Package: NTE3220: 2–Channel Type (8–Lead DIP) NTE3221: 4–Channel Type (16–Lead DIP) Applications: |
NTE |
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| 1 | NTE3222 | Optoisolator NPN Transistor Output NTE3222
Optoisolator NPN Transistor Output
Description: The NTE3222 is an optically coupled isolator in a 4–Lead DIP type package containing a GaAs light emitting diode and an NPN silicon phototransistor. Features: D High Isolation Voltage D High Collector–Emitter Voltage D High Speed Switching |
NTE |
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