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NTE3147 PDF Datasheet

The NTE3147 is (nte3144 - Nte3147) Light Emitting Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NTE3147
(NTE3144 - NTE3147) Light Emitting Diode

NTE3144 thru NTE3147 Light Emitting Diode − 5mm Features: D All Plastic Mold Type w/Water Clear Lens: NTE3144 (High Efficiency Red, AllGaP/GaAs) NTE3145 (Yellow Green, GalnN/GaN) NTE3146 (Yellow, AllnGaP/GaAs) NTE3147 (Orange, AllnGaP/GaAs) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD NTE3144, NTE3146, NTE3147 . . . . . . . . . . .

NTE Electronics
NTE Electronics
pdf

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HG Semiconductors 2sc3147HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998

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2SK3147   Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2

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2SK3147L   Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2

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2SK3147S   Silicon N Channel MOS FET High Speed Power Switching

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