No | Part number | Description ( Function ) | Manufacturers | |
1 | NTE3133 | (NTE3133 - NTE3139) Light Emitting Diode NTE3133, NTE3135, NTE3136, NTE3138, NTE3139 Light Emitting Diode − 1.8mm Features: D All Plastic Mold Type w/Water Clear Lens: NTE3133 (Super Yellow−Green, AllGaP/GaAs) NTE3135 (Orange, AllnGaPl/GaAs) NTE3136 (Super Orange, AllnGaP/GaAs) NTE3138 (Super Red, GaAIAs/GaAIAs) NTE3139 (Super Blue, GaAIAs/GaAIAs) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) |
NTE Electronics |
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Recommended search results related to NTE3133 |
Part No | Description ( Function) | Manufacturers | |
2N3133 | Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0 5.0 4.0 7.0 7.0 7.0 7.0 5.0 4.0 4.0 5.0 4.0 4.0 4.0 5.0 5.0 5.0 |
Central |
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2N3133 | Trans GP BJT NPN 35V 3-Pin TO-18 Box |
New Jersey Semiconductor |
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2SC3133 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
Mitsubishi Electric Semiconductor |
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2SC3133 | NPN SILICON RF POWER TRANSISTOR 2SC3133 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI 2SC3133 is Designed for RF Power amplifiers in HF band mobile radio Applications. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC 6.0 A 25 V 60 V 20 W @ TC = 25 °C -65 °C to +150 |
ASI |
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2SK3133 | Silicon N Channel MOS FET High Speed Power Switching 2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline |
Hitachi Semiconductor |
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Vishay |
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