No | Part number | Description ( Function ) | Manufacturers | |
1 | NTE3035A | Phototransistor Detector NTE3035A Phototransistor Detector Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: D Miniature, Low Profile, Clear Plastic Package D Designed for Automatic Handling and Accurate |
NTE |
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Recommended search results related to NTE3035A |
Part No | Description ( Function) | Manufacturers | |
NTE3035 | Phototransistor Detector NTE3035A Phototransistor Detector Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Feat |
NTE |
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1N3035 | Diode Zener Single 43V 20% 1W 2-Pin DO-13 |
New Jersey Semiconductor |
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1N3035A | Diode Zener Single 43V 10% 1W 2-Pin DO-13 |
New Jersey Semiconductor |
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1N3035B | Silicon 1 WATT Zener Diodes 1N3016B thru 1N3051B 1 WATT METAL CASE ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION This well established zener diode series for the 1N3016 thru 1N3051 JEDEC registration in the metal case DO-13 package provides a glass hermetic seal for 6.8 to 200 volts. It is also well suited |
Microsemi Corporation |
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1N3035B | 1 WATT ZENER DIODES • 1N3016B-1 thru 1N3045B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/115 • 1 WATT ZENER DIODES • METALLURGICALLY BONDED 1N3016B thru1N3045B and 1N3016B-1 thru 1N3045B-1 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175 |
Compensated Deuices Incorporated |
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