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NTE2968 PDF Datasheet

The NTE2968 is MOSFET N-channel / Enhancement Mode High Speed Switch. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NTE2968
MOSFET N-Channel / Enhancement Mode High Speed Switch

NTE2968 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Low Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower Leakage Current D Low Static Drain–Source On–State Resistance Absolute Maximum Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . .

NTE
NTE
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Recommended search results related to NTE2968

Part No Description ( Function) Manufacturers PDF
2SK2968   N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm

Toshiba Semiconductor
Toshiba Semiconductor
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AM2968A   256K DMC / Driver

AMD
AMD
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K2968   MOSFET ( Transistor ) - 2SK2968

2SK2968 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2968 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance : RDS (ON) = 1.05 Ω (typ.) : |Yfs| = 7.6 S (typ.) Unit: mm

Toshiba Semiconductor
Toshiba Semiconductor
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NTE29   Silicon Complementary Transistors High Power / High Current Switch

NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D

NTE
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NTE290   Silicon Complementary Transistors

NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: D 1W Audio Power Amplifier Applications D Switching Applications Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . .

NTE
NTE
datasheet pdf

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