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NTE2955 PDF Datasheet

The NTE2955 is MOSFET N-channel / Enhancement Mode High Speed Switch. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NTE2955
MOSFET N-Channel / Enhancement Mode High Speed Switch

NTE2955 MOSFET N–Channel, Enhancement Mode High Speed Switch Application: D CS Switch for CRT Display Monitor Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . .

NTE
NTE
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Recommended search results related to NTE2955

Part No Description ( Function) Manufacturers PDF
2N2955   SILICON PNP TRANSISTOR

UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25

Unisonic Technologies
Unisonic Technologies
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2N2955   PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23)

Dc Components
Dc Components
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2N2955HV   Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV

Inchange Semiconductor
Inchange Semiconductor
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2SK2955   Silicon N Channel MOS FET High Speed Power Switching

2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. D

Hitachi Semiconductor
Hitachi Semiconductor
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2SK2955   Silicon N Channel MOS FET

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Packag

Renesas
Renesas
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