| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | NTE2933 | MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2933 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.437Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 400V Absolute Maximum Ratings: Drain–to–Source Voltage, VDSS . . . . . . . . . . . . . |
 NTE |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to NTE2933 |
| Part No | Description ( Function) | Manufacturers | |
| 1N2933 | Diode 0.075A 3-Pin TO-18 |
 New Jersey Semiconductor |
|
| 1N2933A | Diode 0.075A 3-Pin TO-18 |
New Jersey Semiconductor |
|
| 2SC2933 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) |
 Mitsubishi Electric Semiconductor |
|
| 2SK2933 | Silicon N Channel MOS FET High Speed Power Switching 2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK29 |
 Hitachi Semiconductor |
|
| B32933 | Metallized Polyester Film Capacitors (MKT) Film Capacitors Metallized Polyester Film Capacitors (MKT) Series/Type: Date: B32932 ... B32936 August 2010 © EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EP |
 EPCOS |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||