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NTE2667 PDF Datasheet

The NTE2667 is (nte2666 / Nte2667) SilICon Complementary Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NTE2667
(NTE2666 / NTE2667) Silicon Complementary Transistors

NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . .

NTE
NTE
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SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2667 ( F3W90HVX2 ) 900V 3A FEATURES ●Input capacitance (Ciss) is small. OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small. ●The s

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FIC02667   4-bit single chip microcomputer

FIGARO Version change of FIC93619A to “FIC02667” F w C PD 02/10/31 ww re .nu at an e ce. 8 com Tr ia Contents January 2003 Figaro Engineering, Inc. Figaro Engineering, Inc. 1. Designation of terminals 2. Function change 3. Recommended mode for FIC02667 4. Recommended ci

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HD64F2667   (HD64F266x Series) 16-Bit Microcontroller

t Single-Chip Microcomputer Hitachi 16 eBit .D a e h S H8S/2668 Series a t HD64F2667 4U . m o c w w w H8S/2667 F-ZTAT Hardware Manual ADE-602-257A Rev. 2.0 04/05/2002 Hitachi, Ltd. w w w .D t a S a e h t e U 4 .c m o w w w .D a t a e h S 4 t e U .

Hitachi
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MAX2667   GPS/GNSS Ultra-Low-Noise-Figure LNAs

EVALUATION KIT AVAILABLE MAX2667/MAX2669 GPS/GNSS Ultra-Low-Noise-Figure LNAs General Description The MAX2667/MAX2669 high-gain, low-noise amplifiers (LNAs) are designed for GPS L1, Galileo, and GLONASS applications. Designed in Maxim’s advanced SiGe process, the devices achie

Maxim Integrated
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