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Datasheet NTE235 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | NTE235 | Silicon NPN Transistor Final RF Power Output NTE235 Silicon NPN Transistor Final RF Power Output
Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Colle |
 NTE |
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| 10 | NTE2350 | Silicon Darlington Transistors NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
Features: |
NTE |
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| 9 | NTE2351 | Silicon Complementary Transistors Darlington Power Amp / Switch NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector� |
NTE |
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| 8 | NTE2352 | Silicon Complementary Transistors NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors
Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector |
NTE |
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