No | Part number | Description ( Function ) | Manufacturers | |
11 | NTE231 | Silicon Controlled Rectifier (SCR) TV Deflection Circuit NTE231 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110° – CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Non–Repetitive Peak Forward Voltage (TJ = +100°C), VDSM . . . . . . . . . . . . . . . . . |
NTE |
|
10 | NTE2310 | Silicon NPN Transistor High Voltage / High Speed Switch NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
|
9 | NTE2311 | Silicon NPN Transistor High Voltage / High Speed Switch NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V D Wide Surge Area: ICSM = 55A @ 350V Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters D Motor Control A |
NTE |
|
8 | NTE2312 | Silicon NPN Transistor High Voltage / High Speed Switch NTE2312 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverters, motor contro |
NTE |
|
7 | NTE2313 | Silicon NPN Transistor High Speed Switch NTE2313 Silicon NPN Transistor High Speed Switch Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems, and switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . |
NTE |
|
6 | NTE2314 | Silicon PNP Transistor High Current / High Speed Switch (Compl to NTE2304) NTE2314 Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: D Low Collector–Emitter Saturation Voltage D Wide ASO and Resistant to B |
NTE |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |