No | Part number | Description ( Function ) | Manufacturers | |
1 | NTE1952 | Integrated Circuit Positive 3 Terminal Voltage Regulator / Low Dropout Voltage / 8V / 1A NTE1952 Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 8V, 1A Description: The NTE1952 positive voltage regulator features the ability to source 1A of output current with a dropout voltage of typically 0.5V and a maximum of 1V over the entire temperature range. Furthermore, a quiescent current reduction circuit has been included which reduces the |
NTE |
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Recommended search results related to NTE1952 |
Part No | Description ( Function) | Manufacturers | |
2SA1952 | High-speed Switching Transistor (−60V/ −5A) 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim |
ROHM Semiconductor |
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A1952 | PNP Transistor - 2SA1952 2SA1952 Transistors High-speed Switching Transistor (−60V, −5A) 2SA1952 zFeatures 1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A) 2) Low VCE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103. zExternal dim |
ROHM Semiconductor |
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AIC1952 | Low-Dropout 300mA Linear Regulator AIC1952 Dual Output Low ESR Cap. Low-Dropout FEATURES Up to 300mA Output Current for Each LDO. Low Quiescent Current : 50µA (VOUT1 and VOUT2 Enable Mode). Low Dropout:200mV at 300mA Load Current and 3.3V Output Voltage. High PSRR:70dB at 1kHz. Ind |
Analog Intergrations Corporation |
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ALN1952 | Internally Matched LNA Module plerowTM ALN1952 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS |
Advanced Semiconductor |
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BTA1952E3 | Low Vcesat PNP Epitaxial Planar Transistor CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC curren |
Cystech Electonics Corp |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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