No | Part number | Description ( Function ) | Manufacturers | |
14 | NTE160 | Germanium PNP Transistor RF-IF Amp / FM Mixer OSC NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collecto |
NTE |
|
13 | NTE16000-ECG | Polymeric Positive Temperature Coefficient (PTC) Resettable Fuses NTE16000–ECG thru NTE16022–ECG Polymeric Positive Temperature Coefficient (PTC) Resettable Fuses ELECTRICAL CHARACTERISTICS IHold NTE Type No. 16000–ECG 16001–ECG 16002–ECG 16003–ECG 16004–ECG 16005–ECG 16006–ECG 16007–ECG 16008–ECG 16009–ECG 16010–ECG 16011–ECG 16012–ECG 16013–ECG 16014–ECG 16015–ECG 16016–ECG 16017–ECG 16018–ECG 16019 |
NTE |
|
12 | NTE16001 | Silicon NPN Transistor Video IF Amp NTE16001 Silicon NPN Transistor Video IF Amp Features: D High Transistion Frequency D Good Linearity of DC Current Gain D An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly Mounted Flush to PC Board Surface. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . |
NTE |
|
11 | NTE16002 | Silicon NPN Transistor RF Power Output / PO = 13.5W / 175MHz NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
|
10 | NTE16003 | Silicon NPN Transistor RF Power Output / PO = 7W / 175MHz NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low outp |
NTE |
|
9 | NTE16004 | Silicon Complementary Transistors High Current / General Purpose NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |