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Datasheet NTD60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | NTD60 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 |
 EDI |
 |
| 9 | NTD60N02R | Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� |
 ON |
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| 8 | NTD60N02R-001 | Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� |
ON |
|
| 7 | NTD60N02R-032 | Power MOSFET 62 A / 24 V / N-Channel / DPAK NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� |
ON |
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