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NTD4863N PDF Datasheet

The NTD4863N is Power MOSFET ( Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NTD4863N
Power MOSFET ( Transistor )

NTD4863N Power MOSFET Features 25 V, 49 A, Single N-Channel, DPAK/IPAK • • • • • Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS 25 V RDS(ON) MAX 9.3 mΩ @ 10 V 14 mΩ @ 4.5 V D ID MAX 49 A Applications • V

ON Semiconductor
ON Semiconductor
pdf

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Recommended search results related to NTD4863N

Part No Description ( Function) Manufacturers PDF
1N4863   SWITCHING RECTIFIERS

1N4863-1N4864 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb pl

Digitron Semiconductors
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2N4863   NPN SILICON TRANSISTOR

Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

Central Semiconductor Corp
Central Semiconductor Corp
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2N4863   Bipolar NPN Device

2N4863 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1

Seme LAB
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2N4863   Trans GP BJT NPN 120V 2A 3-Pin TO-5

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New Jersey Semiconductor
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2SC4863   NPN Epitaxial Planar Silicon Transistor

Ordering number:EN4582 NPN Epitaxial Planar Silicon Transistor 2SC4863 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ. 0.425 Package Di

Sanyo Semicon Device
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