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Datasheet NTD30 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | NTD30 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 |
EDI |
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9 | NTD3055-094 | Power MOSFET ( Transistor )
NTD3055−094 Power MOSFET 12 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
http://onsemi.com
V(BR)DSS 60 V RDS(on) TYP 94 mW N−Channel D ID MAX 12 A
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ON Semiconductor |
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8 | NTD3055-150 | Power MOSFET ( Transistor )
NTD3055−150 Power MOSFET 9.0 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
http://onsemi.com
• Pb−Free Packages are Available
Typical Applications
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ON Semiconductor |
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7 | NTD3055L104 | Power MOSFET ( Transistor ) NTD3055L104 Power MOSFET
12 Amps, 60 Volts, Logic Level N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features http://onsemi.com
V(BR)DSS 60 V RDS(on) TYP 104 mW N−Channel D ID MAX 12 A
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ON |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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