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Datasheet NTD25 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NTD25 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 |
 EDI |
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| 1 | NTD25P03L | Power MOSFET ( Transistor ) NTD25P03L Power MOSFET
−25 A, −30 V, Logic Level P−Channel DPAK
Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source−to−drain diode recovery time is comparable to a discrete fast recovery diode.
Typical |
 ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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