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Datasheet NTD110N02RT4G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NTD110N02RT4G   Power MOSFET ( Transistor )

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC
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NTD110N02R Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NTD110N02RT4G

Power MOSFET ( Transistor )

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in H
 ON
ON		 datasheet pdf - ON
NTD110N02RG

Power MOSFET ( Transistor )

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in H
 ON
ON		 datasheet pdf - ON
NTD110N02R

Power MOSFET ( Transistor )

NTD110N02R Power MOSFET 24 V, 110 A, N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in H
 ON
ON		 datasheet pdf - ON


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Número de pieza Descripción Fabricantes PDF
SPS122

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