No | Part number | Description ( Function ) | Manufacturers | |
1 | NT5CB1024M4CN | 4Gb DDR3 SDRAM C-Die 4Gb DDR3 SDRAM C-Die NT5CB1024M4CN / NT5CB512M8CN / NT5CB256M16CP NT5CC1024M4CN / NT5CC512M8CN / NT5CC256M16CP Feature VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply) VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) 8 Internal memory banks (BA0- BA2) Differential clock input (CK, ) Programmable Latency: 5 |
Nanya |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to NT5CB1024M4CN |
Part No | Description ( Function) | Manufacturers | |
NT5CB1024M4BN | 4Gb DDR3 SDRAM B-Die 4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply) VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.075V) 8 Intern |
Nanya |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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