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Datasheet NPT2010 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NPT2010   GaN HEMT

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Ap
Nitronex
Nitronex
datasheet NPT2010 pdf

NPT2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NPT2022

GaN Wideband Transistor

NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2 GHz  48 V Operation  20 dB Gain @ 900 MHz  60 % Drain Efficiency @ 900 MHz  100 % RF Tested
MA-COM
MA-COM
datasheet pdf - MA-COM
NPT2010

GaN HEMT

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain E
Nitronex
Nitronex
datasheet pdf - Nitronex
NPT2020-SMB2

GaN Wideband Transistor

NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  1
MA-COM
MA-COM
datasheet pdf - MA-COM


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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