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NP23N06YDG PDF Datasheet

The NP23N06YDG is Mos Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NP23N06YDG
MOS FIELD EFFECT TRANSISTOR

NP23N06YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic lev

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