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Datasheet NP16N04YUG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NP16N04YUGMOS FIELD EFFECT TRANSISTOR

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID =
Renesas
Renesas		transistor


NP1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NP100N04NUJMOS FIELD EFFECT TRANSISTOR

NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 1
Renesas
Renesas		transistor
2NP100N04PUKMOS FIELD EFFECT TRANSISTOR

NP100N04PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0545EJ0100 Rev.1.00 Sep 23, 2011 Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V
Renesas
Renesas		transistor
3NP100N055PUKMOS FIELD EFFECT TRANSISTOR

Preliminary Data Sheet NP100N055PUK MOS FIELD EFFECT TRANSISTOR R07DS0589EJ0100 Rev.1.00 Dec 12, 2011 Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS =
Renesas
Renesas		transistor
4NP100P04PDGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY NP100P04PDG-E2-AY
NEC
NEC		transistor
5NP100P04PLGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P04PLG-E1-AY NP100P04PLG-E2-AY
NEC
NEC		transistor
6NP100P06PDGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY
NEC
NEC		transistor
7NP100P06PLGMOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P06PLG-E1-AY NP100P06PLG-E2-AY
NEC
NEC		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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