No | Part number | Description ( Function ) | Manufacturers | |
1 | NJM3357 | LOW POWER NARROW BAND FM IF NJM3357 MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. |
New Japan Radio |
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Recommended search results related to NJM3357 |
Part No | Description ( Function) | Manufacturers | |
2SC3357 | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0. |
NEC |
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2SC3357 | NPN Silicon RF Transistor SMD Type NPN Silicon RF Transistor 2SC3357 IC Transistors Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 |
Kexin |
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2SC3357 | Silicon NPN RF Transistor INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPL |
Inchange Semiconductor |
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2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na |
Renesas |
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2SK3357 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3357 PACKAGE TO-3P DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES |
NEC |
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