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NJM3357 PDF Datasheet

The NJM3357 is Low Power Narrow Band Fm If. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NJM3357
LOW POWER NARROW BAND FM IF

NJM3357 MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

New Japan Radio
New Japan Radio
pdf

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Recommended search results related to NJM3357

Part No Description ( Function) Manufacturers PDF
2SC3357   NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.

NEC
NEC
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2SC3357   NPN Silicon RF Transistor

SMD Type NPN Silicon RF Transistor 2SC3357 IC Transistors Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40

Kexin
Kexin
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2SC3357   Silicon NPN RF Transistor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPL

Inchange Semiconductor
Inchange Semiconductor
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2SC3357   NPN EPITAXIAL SILICON RF TRANSISTOR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na

Renesas
Renesas
datasheet pdf
2SK3357   SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3357 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3357 PACKAGE TO-3P DESCRIPTION The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

NEC
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