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Datasheet NJD2873 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NJD2873 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
NJD2873
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device
per |
 Inchange Semiconductor |
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| 3 | NJD2873 | Power Transistors NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @ |
 ON Semiconductor |
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| 2 | NJD2873T4 | NPN Silicon DPAK For Surface Mount Applications
NJD2873T4 Plastic Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features http://onsemi.com
• Pb−Free Package is Available • High DC Current Gain − • • • •
hFE = 120 (Min) @ IC = 500 mA = |
ON Semiconductor |
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| 1 | NJD2873T4G | Power Transistors NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @ |
ON Semiconductor |
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