No | Part number | Description ( Function ) | Manufacturers | |
2 | NJ72 | Silicon Junction Field-Effect Transistor F-26 01/99 NJ72 Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the NJ72 Proces |
INTERFET |
|
1 | NJ72L | Silicon Junction Field-Effect Transistor F-28 01/99 NJ72L Process Silicon Junction Field-Effect Transistor ¥ VHF/UHF Amplifier Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.020" X 0.020" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based |
INTERFET |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |